By D. J. Fisher
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Extra resources for A Directory of Arrhenius Parameters: Non-metals
The as-grown films were annealed at 724C to 922C in an As-rich ambient, and then analyzed by secondary ion mass spectrometry. A remarkably fast non-Gaussian broadening of the as-grown N distribution was observed. Evaluation of the profile shape provided strong evidence for a kick-out diffusion mechanism on the As sublattice; involving not only interstitial and substitutional N, but also interstitial As as a native point defect. Fitting the data on this basis yielded the diffusion coefficient of N as a function of temperature.
Zagojski: Vacuum, 2005, 78[2-4], 417-22  InSb: Cd Diffusion The diffusion of Cd in single-crystal and polycrystalline material was studied using radiotracer techniques. In single-crystal material, the diffusion was found to obey Fick's law. 52(eV)/kT] In polycrystalline material, the diffusion obeyed the relationship expected for grain boundary diffusion. Watt: Journal of Physics and Chemistry of Solids, 1965, 26, 197-201  InSb: Se Diffusion 56 A Directory of Arrhenius Parameters The diffusion of Se was studied at 400 to 490C by removing layers.
Stolwijk: Applied Physics Letters, 2008, 93, 032107  Ge: Cr Diffusion The diffusion of Cr in monocrystalline material was found to be a rapid process at semiconductor-device fabrication temperatures. Electronic-grade Ge samples were coated with a radioactive surface source and short-term annealed in a lamp furnace at 40 A Directory of Arrhenius Parameters 600 to 900C. 71(eV)/kT] The results were interpreted within the framework of interstitial-substitutional diffusion. Stolwijk: Applied Physics Letters, 2008, 93, 032107  Ge: Fe Diffusion The diffusion of Fe in monocrystalline material was found to be a rapid process at semiconductor-device fabrication temperatures.